[This article belongs to Volume - 54, Issue - 08]
Gongcheng Kexue Yu Jishu/Advanced Engineering Science
Journal ID : AES-20-10-2022-362

Title : Design of Graphene Nanoribbon FET using Quantumwise ATK
P G Mamatha, Dr. N. Geetha Rani, K. Mahesh, Dr. I. Suneetha, G. Vasanthi, G. Rakesh Kumar,

Abstract : Recently, graphene nanoribbon field effect transistors (GNRFETs) are considered as promising contender in nano-electronic industry because of its extraordinary properties such as large mobility, high strength, and optical properties. In this paper, Schottky barrier GNRFET (SB-GNRFET) and doped GNRFET (D-GNRFET) are proposed to investigate their performance in terms of ON and OFF state currents, voltage-current (I-V) curves and transconductance. The presented devices are designed and implemented using the Synopsis based Quantumwise ATK tool to obtain the simulation results. It is observed that the D-GNRFET show high performance over the SB-GNRFET because of the doping concentrations. The simulation results of the proposed devices are obtained by the non-equilibrium Green’s function and the Poisson’s condition solver is utilized to evaluate the electrostatic potential.