Recently, graphene nanoribbon field effect transistors (GNRFETs) are considered as promising contender in nano-electronic industry because of its extraordinary properties such as large mobility, high strength, and optical properties. In this paper, Schottky barrier GNRFET (SB-GNRFET) and doped GNRFET (D-GNRFET) are proposed to investigate their performance in terms of ON and OFF state currents, voltage-current (I-V) curves and transconductance. The presented devices are designed and implemented using the Synopsis based Quantumwise ATK tool to obtain the simulation results. It is observed that the D-GNRFET show high performance over the SB-GNRFET because of the doping concentrations. The simulation results of the proposed devices are obtained by the non-equilibrium Green’s function and the Poisson’s condition solver is utilized to evaluate the electrostatic potential.